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Same model may have multiple batches, images only for reference.
FQPF3N90 Real Image
Same model may have multiple batches, images only for reference.

FQPF3N90

Part No FQPF3N90
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 2.1A TO-220F
Datasheet
FQPF3N90 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 910pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 4.25 Ohm @ 1.05A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 1039927-FQPF3N90
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQPF3N90 CAD Model

Description

The Fairchild/ON Semiconductor FQPF3N90 is a N-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Power Dissipation: 43W (Tc)
  • Drain-Source Breakdown Voltage: 900V
  • Mounting: Through Hole
  • Package: TO-220F
  • Status: Obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Drive Voltage: 10V
  • Rds On: 4.25 Ohm @ 1.05A, 10V
  • Gate-Source Voltage: ±30V
  • Input Capacitance: 910pF @ 25V
  • Supply and demand status: Balance

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80+ $1.4645 $117.1600
125+ $1.4183 $177.2875
170+ $1.3721 $233.2570
220+ $1.3271 $291.9620
295+ $1.1897 $350.9615
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