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Same model may have multiple batches, images only for reference.
FQPF6N50 Real Image
Same model may have multiple batches, images only for reference.

FQPF6N50

Part No FQPF6N50
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 3.6A TO-220F
Datasheet
FQPF6N50 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 790pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 42W (Tc)
Maximum Rds On at Id,Vgs 1.3 Ohm @ 1.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 204315-FQPF6N50
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQPF6N50 CAD Model

Description

The Fairchild/ON Semiconductor FQPF6N50 is an N-Channel MOSFET designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current (25°C): 3.6A
  • Maximum Rds On (Id, Vgs): 1.3 Ohm @ 1.8A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Power Dissipation (Max): 42W (Tc)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-220F
  • Packaging: Tube/Rail
  • Popularity: Medium
  • Supply and Demand: Limited
  • Status: Obsolete (EOL)
  • Features: Halogen-Free Compliant
  • ECCN: EAR99

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