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FQPF6N80C

Part No FQPF6N80C
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 5.5A TO-220F
Sample
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1310pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 51W (Tc)
Maximum Rds On at Id,Vgs 2.5 Ohm @ 2.75A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220F
Dimension TO-220-3 Full Pack
Win Source Part Number 067469-FQPF6N80C
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian FQPF6N80C CAD Model

Description

The Fairchild/ON Semiconductor FQPF6N80C is a N-Channel MOSFET with a drain-source breakdown voltage of 800V and a continuous drain current of 5.5A (Tc) at 25°C.

  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 800V
  • Continuous Drain Current (25°C): 5.5A (Tc)
  • Power Dissipation: 51W (Tc)
  • Maximum Rds On (Id, Vgs): 2.5 Ohm @ 2.75A, 10V
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 30nC @ 10V
  • Maximum Input Capacitance: 1310pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Package: TO-220F
  • Mounting Type: Through Hole
  • Popularity: Medium
  • Supply and Demand: Limited
  • Quantity per Package: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5718 $55.0130
80+ $1.2897 $103.1760
125+ $1.2494 $156.1750
170+ $1.2091 $205.5470
215+ $1.1688 $251.2920
290+ $1.0479 $303.8910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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