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Same model may have multiple batches, images only for reference.
FQT4N25TF Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQT4N25TF

Part No FQT4N25TF
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 250V 0.83A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 250V 0.83A SOT-223
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 830mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 5.6nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Tc)
Maximum Rds On at Id,Vgs 1.75 Ohm @ 415mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 001260-FQT4N25TF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Quantity per package 4k pcs
Family Name FQT4N25
Introduction Date May 21, 2001
ECCN EAR99
Country of Origin Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian FQT4N25TF CAD Model

Description

This MOSFET is manufactured by Fairchild/ON Semiconductor and has a Win Source Part Number of 001260-FQT4N25TF. It is a discrete semiconductor product and has a polarity of N-Channel.

  • Power Dissipation (Max): 2.5W (Tc)
  • Family Name: FQT4N25
  • Popularity: High
  • Fake Product Risk: 32% chance in the open market
  • Supply and Demand: Sufficient
  • Package Size: 4k pcs

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Quantity Unit Price Ext. Price
150+ $0.3881 $58.2150
365+ $0.3185 $116.2525
565+ $0.3085 $174.3025
775+ $0.2986 $231.4150
1,005+ $0.2887 $290.1435
1,340+ $0.2587 $346.6580
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Availability: 89,100 pieces
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