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Same model may have multiple batches, images only for reference.
FQU2N50BTU_WS Real Image
Same model may have multiple batches, images only for reference.

FQU2N50BTU_WS

Part No FQU2N50BTU_WS
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 1.6A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 230pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 5.3 Ohm @ 800mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 001266-FQU2N50BTU_WS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQU2N50BTU_WS CAD Model

Description

The FQU2N50BTU_WS is an N-Channel MOSFET manufactured by Fairchild/ON Semiconductor.

  • Package: I-Pak
  • Mounting Type: Through Hole
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 1.6A (Tc) @ 25°C
  • Maximum Rds On: 5.3 Ohm @ 800mA, 10V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate Charge: 8nC @ 10V
  • Maximum Input Capacitance: 230pF @ 25V
  • Supply and Demand: Balanced
  • Package Quantity: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4105 $59.5225
345+ $0.3370 $116.2650
535+ $0.3263 $174.5705
735+ $0.3158 $232.1130
950+ $0.3053 $290.0350
1,270+ $0.2737 $347.5990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,480 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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