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Same model may have multiple batches, images only for reference.
FQU2N90TU_AM002 Real Image
Same model may have multiple batches, images only for reference.

FQU2N90TU_AM002

Part No FQU2N90TU_AM002
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 1.7A IPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 7.2 Ohm @ 850mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 001268-FQU2N90TU_AM002
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQU2N90TU_AM002 CAD Model

Description

The FQU2N90TU_AM002 is an N-channel MOSFET manufactured by Fairchild/ON Semiconductor. It has a maximum power dissipation of 2.5W (Ta), 50W (Tc) and a drive voltage of 10V.

  • Polarity: N-Channel
  • Power Dissipation: 2.5W (Ta), 50W (Tc)
  • Drive Voltage: 10V

Popular choice for electronic components with a medium popularity rating.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8666 $60.6620
165+ $0.7112 $117.3480
255+ $0.6888 $175.6440
350+ $0.6667 $233.3450
450+ $0.6445 $290.0250
600+ $0.5777 $346.6200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,500 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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