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Same model may have multiple batches, images only for reference.
FQU4P25TU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

FQU4P25TU

Part No FQU4P25TU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 3.1A IPAK
Datasheet
FQU4P25TU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 420pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 2.1 Ohm @ 1.55A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1040000-FQU4P25TU
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQU4P25TU CAD Model

Description

It is a P-Channel MOSFET with a maximum power dissipation of 2.5W (Ta), 45W (Tc) and a drain-source breakdown voltage of 250V.

  • Win Source Part Number: 1040000-FQU4P25TU
  • Channel Type: P-Channel
  • Maximum Power Dissipation: 2.5W (Ta), 45W (Tc)
  • Drain-Source Breakdown Voltage: 250V
  • Mounting Type: through hole
  • Category: discrete semiconductor products
  • Maximum Rds On @ Id,Vgs: 2.1 Ohm @ 1.55A, 10V

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