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Same model may have multiple batches, images only for reference.
HGT1S2N120CN
Same model may have multiple batches, images only for reference.

HGT1S2N120CN

Part No HGT1S2N120CN
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 13A 104W I2PAK
Datasheet
HGT1S2N120CN Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 13A
Pulsed Collector Current 20A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 2.6A
Maximum Power Dissipation 104W
Total Switching Energy(Ets) 96μJ (on), 355μJ (off)
Input Type Standard
Gate Charge 30nC
Turn-on and Turn-off delay time 25ns/205ns
Testing Conditions 960V, 2.6A, 51 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-262
Win Source Part Number 1043303-HGT1S2N120CN
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HGT1S2N120CN CAD Model

Description

The Fairchild/ON Semiconductor IGBT (Insulated Gate Bipolar Transistor) with an NPT (Non-Punch Through) type is a high-performance electronic component.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 13A
  • Mounting Type: Through Hole
  • Package: TO-262
  • Gate Charge: 30nC
  • Total Switching Energy (on): 96μJ
  • Total Switching Energy (off): 355μJ
  • Turn-On Delay Time: 25ns
  • Turn-Off Delay Time: 205ns
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V, 2.6A
  • Application: Discrete Semiconductor Products

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