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HUF75329D3ST

Part No HUF75329D3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 20A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 65nC @ 20V
Max Input Capacitance 1060pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 128W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017077-HUF75329D3ST
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian HUF75329D3ST CAD Model

Description

The Fairchild/ON Semiconductor 017077-HUF75329D3ST is an N-Channel MOSFET with a maximum power dissipation of 128W (Tc). It has a drive voltage of 10V and a maximum gate-source voltage of ±20V.

  • Maximum Rds On: 26 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 65nC @ 20V
  • Maximum Input Capacitance: 1060pF @ 25V
  • Temperature Range: -55°C to 175°C (TJ)
  • Mounting: SMD (SMT)
  • Supply and Demand Status: Balanced
  • Quantity per Package: 2,500

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