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Same model may have multiple batches, images only for reference.
HUF75329P3 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUF75329P3

Part No HUF75329P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
Datasheet
HUF75329P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Series UltraFET
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 75nC @ 20V
Input Capacitance (Ciss) (Maximum) @ Vds 1060pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 128W (Tc)
Rds On (Maximum) @ Id, Vgs 24 mOhm @ 49A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220AB
Package TO-220-3
Win Source Part Number 1182431-HUF75329P3
Manufacturer Homepage www.fairchildsemi.com
Family Name HUF75329P3
Introduction Date January 09, 2002
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF75329P3 CAD Model

Description

The Fairchild/ON Semiconductor HUF75329P3 is a MOSFET transistor designed for use in electronic devices.

  • Maximum Continuous Drain Current: 49A @ 25°C
  • Package: TO-220-3
  • Maximum Power Dissipation: 128W @ Tc
  • Maximum Drain-Source Voltage: 55V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Input Capacitance: 1060pF @ 25V
  • Gate Charge: 75nC @ 20V
  • Series: UltraFET

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