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Same model may have multiple batches, images only for reference.
HUF75343S3
Same model may have multiple batches, images only for reference.

HUF75343S3

Part No HUF75343S3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-262AA
Datasheet
HUF75343S3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 205nC @ 20V
Max Input Capacitance 3000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 270W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262AA
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1044188-HUF75343S3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUF75343S3 CAD Model

Description

The Fairchild/ON Semiconductor HUF75343S3 is a high-performance N-channel MOSFET that is commonly used in power electronics circuits.

  • Designed for: use in high-current applications such as power supplies, motor control, and lighting
  • Maximum Power Dissipation: 270W
  • Maximum Drain-Source Breakdown Voltage: 55V
  • On-Resistance: 9mOhm @ 75A and 10V
  • Package: TO-262AA
  • Format: tube/rail
  • Popularity: medium
  • Supply and Demand Status: sufficient

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