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Same model may have multiple batches, images only for reference.
SSM3J36MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J36MFV,L3F

Part No SSM3J36MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.33A VESM
Datasheet
SSM3J36MFV,L3F Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Max Gate Charge 1.2nC @ 4V
Max Input Capacitance 43pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 1.31 Ohm @ 100mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VESM
Dimension SOT-723
Win Source Part Number 099743-SSM3J36MFV,L3F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J36MFV,L3F CAD Model

Description

This MOSFET electronic component is manufactured by Toshiba Semiconductor and Storage and has a win source part number of 099743-SSM3J36MFV, L3F.

  • Packaging: Cut Reel
  • Mounting Technology: SMD (SMT)
  • Polarity: P-Channel
  • Maximum Power Dissipation: 150mW (Ta)
  • Category: Discrete Semiconductor Products
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Temperature Range: 150 degrees Celsius (TJ)
  • Case: VESM
  • Dimension: SOT-723
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 330mA (Ta) @ 25 degrees Celsius
  • Maximum Gate Charge: 1.2nC @ 4V
  • Maximum Input Capacitance: 43pF @ 10V
  • Maximum Gate-Source Voltage: +/-8V
  • Maximum Rds On: 1.31 Ohm @ 100mA, 4.5V
  • Supply and Demand Status: Sufficient

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