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Same model may have multiple batches, images only for reference.
HUF75637P3 Real Image
Same model may have multiple batches, images only for reference.

HUF75637P3

Part No HUF75637P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 44A TO-220AB
Datasheet
HUF75637P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 108nC @ 20V
Max Input Capacitance 1700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 155W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 44A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 068299-HUF75637P3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian HUF75637P3 CAD Model

Description

The HUF75637P3 is an N-channel MOSFET transistor manufactured by Fairchild/ON Semiconductor.

  • Maximum Power Dissipation: 155W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Status: Obsolete (EOL)
  • Case/Package: TO-220AB
  • Applications: Industrial applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6537 $58.8330
220+ $0.5359 $117.8980
335+ $0.5198 $174.1330
460+ $0.5024 $231.1040
595+ $0.4863 $289.3485
800+ $0.4354 $348.3200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,524 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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