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HUF76105SK8T

Part No HUF76105SK8T
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series UltraFET®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 325 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874010-HUF76105SK8T
Ultra Librarian 3D Model Ultra Librarian HUF76105SK8T CAD Model

Description

The 874010-HUF76105SK8T is an N-channel MOSFET transistor from the UltraFET® series.

  • Series: UltraFET®
  • Type: N-channel MOSFET
  • Drain-to-source Voltage (Vdss): 30 V
  • Continuous Drain Current (Id): 5.5A @ 25°C
  • On-Resistance (Rds On): 50mOhm @ 5.5A and 10V gate-source voltage
  • Gate Charge (Qg): 11 nC @ 10V gate-source voltage
  • Input Capacitance (Ciss): 325 pF @ 25V drain-source voltage
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 150°C
  • Mounting: Surface mountable
  • Package: 8-SOIC
  • Width: 0.154 inches (3.90mm)
  • Supplier Device Package: 8-SOIC
  • Packaging: Bulk
  • Standard Package: 2,500 pieces
  • ECCN Code: EAR99
  • REACH: Not affected by REACH regulations

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