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Same model may have multiple batches, images only for reference.
HUF76445P3 Real Image
Same model may have multiple batches, images only for reference.

HUF76445P3

Part No HUF76445P3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A TO-220AB
Datasheet
HUF76445P3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 4965pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 310W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1044220-HUF76445P3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUF76445P3 CAD Model

Description

The Fairchild/ON Semiconductor HUF76445P3 is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 60V and Continuous Drain Current @ 25°C of 75A (Tc).

  • Maximum Rds On at Id,Vgs: 6.5 mOhm @ 75A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Power Dissipation (Max): 310W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Package: TO-220AB case
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate Charge: 150nC @ 10V
  • Maximum Input Capacitance: 4965pF @ 25V
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Sufficient

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