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HUF76633S3ST_F085

Part No HUF76633S3ST_F085
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 39A TO-263AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1810pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 183W (Tj)
Maximum Rds On at Id,Vgs 35 mOhm @ 39A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 130302-HUF76633S3ST_F085
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HUF76633S3ST_F085 CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-performance transistor.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 39A at 25°C
  • Power Dissipation: 183W
  • Package: D2PAK (TO-263AB)
  • Gate-Source Voltage: ±16V
  • Input Capacitance: 1810pF at 25V
  • Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.1878 $72.7512
8+ $14.9226 $119.3808
12+ $14.4571 $173.4852
17+ $13.9905 $237.8385
22+ $13.5239 $297.5258
29+ $12.1252 $351.6308
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,600 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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