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Same model may have multiple batches, images only for reference.
HUFA75321D3ST Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUFA75321D3ST

Part No HUFA75321D3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 20A DPAK
Datasheet
HUFA75321D3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 44nC @ 20V
Max Input Capacitance 680pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 93W (Tc)
Maximum Rds On at Id,Vgs 36 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1044231-HUFA75321D3ST
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUFA75321D3ST CAD Model

Description

The Fairchild/ON Semiconductor HUFA75321D3ST is an N-channel MOSFET designed for use in a variety of applications.

  • Maximum Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 20A (Tc)
  • On-Resistance: 36 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 44nC @ 20V
  • Package: TO-252AA
  • Operating Temperature: -55°C to 175°C
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5879 $58.7900
240+ $0.4828 $115.8720
375+ $0.4678 $175.4250
515+ $0.4528 $233.1920
660+ $0.4377 $288.8820
885+ $0.3927 $347.5395
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,390 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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