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Same model may have multiple batches, images only for reference.
RQJ0303PGDQA#H6 Real Image
Same model may have multiple batches, images only for reference.

RQJ0303PGDQA#H6

Part No RQJ0303PGDQA#H6
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 3.3A 3MPAK
Datasheet
RQJ0303PGDQA#H6 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Max Gate Charge 12nC @ 10V
Max Input Capacitance 625pF @ 10V
Maximum Gate-Source Voltage +10V, -20V
Power Dissipation (Max) 800mW (Ta)
Maximum Rds On at Id,Vgs 68 mOhm @ 1.6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-MPAK
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1092639-RQJ0303PGDQA#H6
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RQJ0303PGDQA#H6 CAD Model

Description

The Renesas Electronics America RQJ0303PGDQA#H6 MOSFET is a high power, P-channel device designed for use in discrete semiconductor products.

  • Manufacturer: Renesas Electronics America
  • Channel Type: P-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.3A @ Ta
  • Maximum Rds On: 68 mOhm @ 1.6A, 10V
  • Gate-Source Threshold Voltage: - volts
  • Package: 3-MPAK
  • Power Dissipation: Up to 800mW @ Ta
  • Common Applications: Power supplies, motor control, and lighting systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,400 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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