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HUFA75337S3ST

Part No HUFA75337S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
Sample
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 109nC @ 20V
Max Input Capacitance 1775pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 175W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044243-HUFA75337S3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA75337S3ST CAD Model

Description

The MOSFET is a high-performance N-channel power transistor that is designed to handle a maximum power dissipation of 175W from Fairchild/ON Semiconductor.

  • Power Dissipation: 175W
  • Package: D2PAK (TO-263AB)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A (Tc)
  • Maximum Rds On @ Id,Vgs: 14 mOhm @ 75A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 109nC @ 20V
  • Maximum Input Capacitance: 1775pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Status: Obsolete (EOL)
  • Mounting: SMD (SMT)
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3039 $58.6755
110+ $1.0699 $117.6890
170+ $1.0365 $176.2050
235+ $1.0030 $235.7050
300+ $0.9697 $290.9100
400+ $0.8693 $347.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 771 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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