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Same model may have multiple batches, images only for reference.
HUFA75339G3 Real Image
Same model may have multiple batches, images only for reference.

HUFA75339G3

Part No HUFA75339G3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-247
Datasheet
HUFA75339G3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 20V
Max Input Capacitance 2000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Dimension TO-247-3
Win Source Part Number 1044244-HUFA75339G3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA75339G3 CAD Model

Description

The HUFA75339G3 is an N-channel MOSFET with a drain-source breakdown voltage of 55V and a continuous drain current of 75A (Tc) @ 25°C.

  • Maximum Power Dissipation: 200W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id,Vgs: 12 mOhm @ 75A, 10V
  • Suitable for: High power applications
  • Packaging: TO-247-3

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