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Same model may have multiple batches, images only for reference.
HUFA75652G3
Same model may have multiple batches, images only for reference.

HUFA75652G3

Part No HUFA75652G3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 75A TO-247
Datasheet
HUFA75652G3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 475nC @ 20V
Max Input Capacitance 7585pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 515W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 1044266-HUFA75652G3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA75652G3 CAD Model

Description

The Fairchild/ON Semiconductor HUFA75652G3 is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 100V and a Continuous Drain Current of 75A @ 25°C.

  • Maximum Rds On: 8 mOhm @ 75A and 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 475nC @ 20V
  • Max Input Capacitance: 7585pF @ 25V
  • Package: TO-247
  • Product Status: Obsolete (EOL)
  • Popularity: Medium

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