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Same model may have multiple batches, images only for reference.
HUFA75842S3S Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUFA75842S3S

Part No HUFA75842S3S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 43A D2PAK
Datasheet
HUFA75842S3S Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 175nC @ 20V
Max Input Capacitance 2730pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044270-HUFA75842S3S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA75842S3S CAD Model

Description

The Fairchild/ON Semiconductor MOSFET is a high-power N-channel transistor with a maximum power dissipation of 230W (Tc).

  • Category: Discrete semiconductor products
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 43A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 175nC @ 20V
  • Maximum Rds On @ Id, Vgs: 42 mOhm @ 43A, 10V
  • Package: D2PAK (TO-263AB)
  • Mounting Technology: SMD (SMT)
  • Status: obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)

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85+ $1.3691 $116.3735
135+ $1.3263 $179.0505
180+ $1.2836 $231.0480
235+ $1.2407 $291.5645
315+ $1.1124 $350.4060
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