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HUFA76407D3ST

Part No HUFA76407D3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 11.3nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 38W (Tc)
Maximum Rds On at Id,Vgs 92 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1044273-HUFA76407D3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA76407D3ST CAD Model

Description

The Fairchild/ON Semiconductor HUFA76407D3ST is an N-channel MOSFET designed for use in a variety of applications.

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: Up to 12A @ 25°C
  • On-Resistance: Low
  • Switching Speed: Fast
  • Package: TO-252AA

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