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Same model may have multiple batches, images only for reference.
SPB80N03S2L-06 G Real Image
Same model may have multiple batches, images only for reference.

SPB80N03S2L-06 G

Part No SPB80N03S2L-06 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A D2PAK
Datasheet
SPB80N03S2L-06 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 80μA
Max Gate Charge 68nC @ 10V
Max Input Capacitance 2530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 101412-SPB80N03S2L-06 G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB80N03S2L-06 G CAD Model

Description

The Infineon Technologies SPB80N03S2L-06 G is an obsolete (EOL) N-channel MOSFET that was commonly used in various applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 80A @ 25°C
  • Maximum Power Dissipation: 150W
  • Maximum Gate-Source Voltage: ±20V
  • Alternative Parts: STB80NE03L-06T4 and SPB80N03S2L06NT

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Quantity Unit Price Ext. Price
50+ $1.1771 $58.8550
120+ $0.9658 $115.8960
190+ $0.9357 $177.7830
260+ $0.9055 $235.4300
330+ $0.8753 $288.8490
445+ $0.7847 $349.1915
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