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Same model may have multiple batches, images only for reference.
HUFA76437S3ST Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUFA76437S3ST

Part No HUFA76437S3ST
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 71A D2PAK
Datasheet
HUFA76437S3ST Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 2230pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 155W (Tc)
Maximum Rds On at Id,Vgs 14 mOhm @ 71A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1044293-HUFA76437S3ST
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA76437S3ST CAD Model

Description

The Fairchild/ON Semiconductor 438929 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 155W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 71A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Rds On at Id,Vgs: 14 mOhm @ 71A, 10V
  • Package: D2PAK (TO-263AB)
  • Product Status: Obsolete (EOL)
  • Popularity: Medium

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