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Same model may have multiple batches, images only for reference.
IRF610A Real Image
Same model may have multiple batches, images only for reference.

IRF610A

Part No IRF610A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.65A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 25 V
Power Dissipation (Max) 38W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 604388-IRF610A
Ultra Librarian 3D Model Ultra Librarian IRF610A CAD Model

Description

The IRF610A is an N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Vdss: 200V
  • Id: 3.3A @ 25°C
  • Rds On (Max): 1.5Ohm @ 1.65A and 10V
  • Qg: 10nC @ 10V
  • Package: TO-220-3
  • Mounting: Through hole
  • Temperature Range: -55°C to 150°C
  • Manufacturer: Fairchild/ON Semiconductor
  • Market Status: Currently active

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