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IRFS820B

Part No IRFS820B
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 610 pF @ 25 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875188-IRFS820B
Ultra Librarian 3D Model Ultra Librarian IRFS820B CAD Model

Description

The 875188-IRFS820B is a single N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-to-Source Voltage: 500V
  • Continuous Drain Current @ 25°C: 2.5A
  • Maximum On-Resistance @ 1.25A and 10V: 2.6 Ohms
  • Gate Threshold Voltage @ 250μA: 4V
  • Power Dissipation @ 25°C: 33W
  • Mounting: Through-Hole
  • Package: TO-220-3 full pack
  • Manufacturer: Fairchild/ON Semiconductor
  • Product Status: Active

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