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Same model may have multiple batches, images only for reference.
IRFW640BTM Real Image
Same model may have multiple batches, images only for reference.

IRFW640BTM

Part No IRFW640BTM
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 161058-IRFW640BTM
Ultra Librarian 3D Model Ultra Librarian IRFW640BTM CAD Model

Description

The 161058-IRFW640BTM is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Vdss: 200 V
  • Id: 18A @ 25°C
  • Rds On: 180mOhm @ 9A, 10V
  • Power Dissipation: up to 3.13W
  • Mounting: surface mountable
  • Package: TO-263-3, D²Pak
  • Qg: 58nC @ 10V
  • Ciss: 1700pF @ 25V
  • Operating Temperature: -55°C to 150°C
  • Manufacturer: Fairchild/ON Semiconductor
  • Status: active in the market

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