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Same model may have multiple batches, images only for reference.
IRL610A Real Image
Same model may have multiple batches, images only for reference.

IRL610A

Part No IRL610A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 3.3A TO-220
Datasheet
IRL610A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 9nC @ 5V
Max Input Capacitance 240pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.65A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 1047514-IRL610A
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRL610A CAD Model

Description

This MOSFET product is manufactured by Fairchild/ON Semiconductor and is categorized as a Discrete Semiconductor Product.

  • Mounting Type: Through Hole
  • Packaging: Tube/Rail
  • Maximum Power Dissipation: 33W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 3.3A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 9nC @ 5V
  • Maximum Input Capacitance: 240pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 1.5 Ohm @ 1.65A, 5V
  • Supply and Demand Status: Sufficient
  • Application: Power Management

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