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KSA539YBU

Part No KSA539YBU
Manufacturer Fairchild/ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 45V 0.2A TO92-3  /  Bipolar (BJT) Transistor PNP 45 V 200 mA 400 mW Through Hole TO-92-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Fairchild Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 15mA, 150mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 50mA, 1V
Power - Max 400 mW
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
ECCN EAR99
HTSUS 8541.21.0095
Other Names FAIFSCKSA539YBU,2156-KSA539YBU-FS
Standard Package 1,000
Win Source Part Number 1042225-KSA539YBU
Ultra Librarian 3D Model Ultra Librarian KSA539YBU CAD Model

Description

The Fairchild Semiconductor 1042225-KSA539YBU is a PNP transistor with a maximum power of 400 mW.

  • Maximum Power: 400 mW
  • Maximum Collector-Emitter Breakdown Voltage: 45 V
  • Maximum Collector Current: 200 mA
  • Package: TO-92-3
  • Mounting Type: Through-Hole
  • DC Current Gain (hFE): 120 @ 50mA and 1V
  • Maximum Vce Saturation: 500mV @ 15mA and 150mA
  • Commonly Used In: Discrete Semiconductor Products such as Transistors, Bipolar (BJT) - Single
  • Standard Package: 1000

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