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DMT6007LFGQ-13

Part No DMT6007LFGQ-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 15A PWRDI3333
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 60 V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerVDFN
Case / Package PowerDI3333-8
Family Name DMT6007
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869146-DMT6007LFGQ-13
Ultra Librarian 3D Model Ultra Librarian DMT6007LFGQ-13 CAD Model

Description

DMT6007LFGQ-13: High-Efficiency MOSFET from Diodes Incorporated

The DMT6007LFGQ-13 is a cutting-edge power MOSFET product brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to cater to the growing demands of power efficiency and miniaturization in modern electronic applications.

Constructed with advanced trench technology, the DMT6007LFGQ-13 offers superior performance with low on-resistance (R<sub>DS(on)) and low gate charge (Q<sub>g), making it an ideal component for high-efficiency power management solutions. Its low threshold voltage ensures that the MOSFET can be easily driven by low-voltage logic signals, making it compatible with a broad range of microcontroller and logic interfaces.

The DMT6007LFGQ-13 comes in a compact PowerDI™5060-8 package, which is optimized for thermal performance and space-saving on the PCB. This package also provides excellent power dissipation, ensuring reliable operation even under high current conditions. With a continuous drain current (I<sub>D) of up to 60A, this MOSFET can handle significant power without compromising on efficiency or thermal management.

Key features of the DMT6007LFGQ-13 include:

  • 60V Drain-Source Breakdown Voltage (V<sub>DS)
  • Low On-Resistance (R<sub>DS(on))
  • High Continuous Drain Current (I<sub>D)
  • PowerDI™5060-8 Package for Enhanced Thermal Performance
  • Fast Switching Speeds
  • RoHS Compliant

This MOSFET is suitable for a wide range of applications, such as power supply circuits, DC-DC converters, motor drives, and other power-intensive applications where efficiency is paramount. Its robust design ensures long-term reliability, making it a preferred choice for designers looking to enhance the performance of their electronic systems.

With the DMT6007LFGQ-13, Diodes Incorporated continues its tradition of providing high-performance semiconductor solutions that meet the stringent requirements of modern electronics. Whether you are designing power management systems for consumer electronics, industrial applications, or automotive technologies, the DMT6007LFGQ-13 is engineered to deliver top-notch performance and efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0814 $52.0350
59+ $1.7079 $100.7661
91+ $1.6545 $150.5595
125+ $1.6011 $200.1375
162+ $1.5478 $250.7436
217+ $1.3876 $301.1092
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,300 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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