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NTH4L160N120SC1

Part No NTH4L160N120SC1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 17.3A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1204023-NTH4L160N120SC1
Win Source Part Number Cross
Manufacturer onsemi
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 17.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Ultra Librarian 3D Model Ultra Librarian NTH4L160N120SC1 CAD Model

Description

Introducing the NTH4L160N120SC1 Silicon Carbide MOSFET from ON Semiconductor

The NTH4L160N120SC1 is a cutting-edge silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) offered by ON Semiconductor, a renowned leader in power and signal management. This high-performance MOSFET is designed to meet the rigorous demands of power conversion systems, providing exceptional efficiency, reliability, and thermal performance.

Key Features

  • High Blocking Voltage: With a drain-to-source voltage (V<sub>DS) of 1200V, the NTH4L160N120SC1 provides robust performance for high-voltage applications, ensuring safe operation under extreme conditions.
  • Low On-Resistance: The device boasts an ultra-low on-resistance (R<sub>DS(on)) of 160 mΩ, which minimizes conduction losses and improves overall efficiency in power conversion systems.
  • Fast Switching Speed: The fast intrinsic diode with low reverse recovery charge (Q<sub>rr) allows for rapid switching, reducing switching losses and enabling high-frequency operation.
  • High-Temperature Operation: The MOSFET is capable of operating at junction temperatures up to 150°C, making it suitable for applications with challenging thermal environments.

Applications

The NTH4L160N120SC1 is ideal for a wide range of applications, including:

  • Electric vehicle (EV) chargers
  • Photovoltaic (PV) inverters
  • Switched mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
  • Motor drives
  • Induction heating systems

Enhanced Performance

ON Semiconductor's NTH4L160N120SC1 SiC MOSFET is engineered to optimize power density and efficiency while reducing thermal issues often associated with high-power applications. The device's robust design ensures minimal gate ringing and reduced electromagnetic interference (EMI), which is critical for maintaining performance in noise-sensitive applications.

Reliability and Quality

ON Semiconductor is committed to delivering high-quality and reliable components. The NTH4L160N120SC1 MOSFET is no exception, as it is manufactured with state-of-the-art processes and subjected to rigorous testing to ensure it meets the highest industry standards. Customers can trust this MOSFET to deliver consistent performance and longevity, even in the most demanding applications.

With its advanced features and proven reliability, the NTH4L160N120SC1 from ON Semiconductor is an excellent choice for designers looking to enhance the efficiency and durability of their power conversion systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.7852 $58.9260
11+ $9.6700 $106.3700
17+ $9.3678 $159.2526
23+ $9.0656 $208.5088
29+ $8.7634 $254.1386
39+ $7.8568 $306.4152
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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