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FCPF260N65FL1-F154

Part No FCPF260N65FL1-F154
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO220F-3  /  N-Channel 650 V 15A (Tc) 36W (Tc) Through Hole TO-220F-3
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series FRFET®, SuperFET® II
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc)
Rds On (Max) @ Id, Vgs 260mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 100 V
Power Dissipation (Max) 36W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F-3
Package / Case TO-220-3 Full Pack
Base Product Number FCPF260
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-FCPF260N65FL1-F154
Standard Package 1,000
Win Source Part Number 1058687-FCPF260N65FL1-F154
Ultra Librarian 3D Model Ultra Librarian FCPF260N65FL1-F154 CAD Model

Description

The FCPF260N65FL1-F154 is a high-performance, N-channel MOSFET brought to you by ON Semiconductor, a leading figure in the field of energy-efficient innovations. This power MOSFET is designed to meet the rigorous demands of modern electronic applications, offering a robust solution for power management challenges.

Key Features

  • High Voltage Capability: With a drain-to-source voltage (V<sub>DS) of 650V, this MOSFET is suitable for high-voltage applications, ensuring reliable operation under strenuous conditions.
  • Low On-Resistance: The FCPF260N65FL1-F154 boasts a low R<sub>DS(on), minimizing conduction losses and improving overall efficiency, which is crucial for power-intensive applications.
  • Fast Switching: The device features fast switching speeds, which helps in reducing switching losses and is beneficial for applications that require high-frequency operation.
  • High Current Capacity: This MOSFET can handle a continuous drain current (I<sub>D) of up to 4.4A, making it capable of driving significant loads without performance degradation.
  • Low Gate Charge (Q<sub>g): A low gate charge ensures that the device can be driven at lower voltages, simplifying the drive circuitry and reducing power consumption.

Applications

The FCPF260N65FL1-F154 is ideal for a wide range of applications, including:

  • Power supply units (PSUs)
  • LED lighting
  • High-efficiency DC/DC converters
  • Power inverters
  • Motor control systems

Reliability and Performance

ON Semiconductor's commitment to quality and performance is evident in the FCPF260N65FL1-F154. The device is designed to ensure long-term reliability and stability, even under harsh operating conditions. Its thermal performance is optimized through an advanced package design, providing enhanced heat dissipation and contributing to a longer lifespan.

Environmental Compliance

Adhering to the highest standards of environmental responsibility, the FCPF260N65FL1-F154 complies with RoHS regulations, making it a suitable choice for eco-friendly and energy-efficient designs.

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Shipped from HK warehouse
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