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KSC2330RTA

Part No KSC2330RTA
Manufacturer Fairchild/ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN 300V 0.1A TO92-3  /  Bipolar (BJT) Transistor NPN 300 V 100 mA 50MHz 1 W Through Hole TO-92-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Fairchild Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V
Power - Max 1 W
Frequency - Transition 50MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package TO-92-3
ECCN EAR99
HTSUS 8541.29.0075
Other Names 2156-KSC2330RTA-FSTB-ND,2156-KSC2330RTA,FAIFSCKSC2330RTA
Standard Package 2,000
Win Source Part Number 1067961-KSC2330RTA
Ultra Librarian 3D Model Ultra Librarian KSC2330RTA CAD Model

Description

The KSC2330RTA is a NPN Epitaxial Silicon Transistor designed for amplifier and switching applications. It is manufactured by Fairchild Semiconductor/ON Semiconductor. This transistor offers good amplification capabilities and is suitable for use in various electronic circuits.

Applications:

  • Audio Amplifiers
  • Switching Circuits
  • Signal Amplification
  • General Purpose Amplification
  • Consumer Electronics

Features:

  • High Collector Current (Ic): Designed to handle moderate collector current, making it suitable for driving loads.
  • Low Saturation Voltage: Ensures efficient switching operation with minimal power dissipation.
  • High Transition Frequency (fT): Supports fast switching speeds for use in high-frequency circuits.
  • Epitaxial Silicon Construction: Offers enhanced performance and reliability.
  • NPN Polarity: Standard NPN configuration for ease of circuit integration.

Benefits:

  • Improved Audio Quality: Its amplification capabilities are ideal for audio amplifier circuits.
  • Efficient Switching: The low saturation voltage helps minimize power loss during switching.
  • Versatile Usage: Suitable for a broad range of amplifier and switching applications.
  • Stable Performance: The epitaxial silicon structure provides consistent and reliable performance.
  • Cost-Effective Solution: Offers a good balance between performance and cost for various electronic designs.

Technical Specifications:

Typical specifications for the KSC2330RTA include:

  • Collector-Emitter Voltage (VCEO): 120V
  • Collector-Base Voltage (VCBO): 120V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 0.5A
  • Collector Dissipation (PC): 0.8W
  • Transition Frequency (fT): 4 MHz
  • hFE (DC Current Gain): 40-240

The KSC2330RTA is commonly available in a TO-92 package and provides a reliable and cost-effective solution for both amplifier and switching circuit applications.

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