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Same model may have multiple batches, images only for reference.
KSD1616GBU Real Image
Same model may have multiple batches, images only for reference.

KSD1616GBU

Part No KSD1616GBU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 50V 1A TO92-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V
Power - Max 750 mW
Frequency - Transition 160MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Standard Package 6,662 pcs
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 746604-KSD1616GBU
Ultra Librarian 3D Model Ultra Librarian KSD1616GBU CAD Model

Description

The 746604-KSD1616GBU is an NPN Bipolar Transistor used in various electronic applications.

  • Maximum Power Rating: 750 mW
  • Maximum Voltage Breakdown: 50 V
  • Maximum Collector Current: 1 A
  • Mounting Type: Through-hole
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Vce Saturation: 300mV @ 50mA, 1A
  • DC Current Gain (hFE): 200 @ 100mA, 2V
  • Transition Frequency: 160MHz
  • Operating Temperature Range: 150°C (TJ)
  • Status: Obsolete
  • Manufacturer: Fairchild/ON Semiconductor

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