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Same model may have multiple batches, images only for reference.
IPI023NE7N3 G Real Image
Same model may have multiple batches, images only for reference.

IPI023NE7N3 G

Part No IPI023NE7N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A TO262-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 75V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Vgs(th) (Maximum) @ Id 3.8V @ 273μA
Gate Charge (Qg) (Maximum) @ Vgs 206nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 14400pF @ 37.5V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 2.3 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO262-3
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 776871-IPI023NE7N3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI023NE7N3 G CAD Model

Description

The Infineon Technologies IPI023NE7N3 G is a MOSFET type device, manufactured by Infineon Technologies.

  • Channel Type: N
  • Drain-Source Voltage: 75V
  • Series: OptiMOS
  • Packaging: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supply and Demand Status: Limited
  • Status: Obsolete (EOL)
  • Alternative Parts: STV240N75F3, IPI023NE7N3GXK, IPP023NE7N3GXK, IPI023NE7N3 G

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