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MMBT4403T-7

Part No MMBT4403T-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.6A SOT-523
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 150 mW Surface Mount SOT-523
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package SOT-523
Case / Package SOT-523
Family Name MMBT4403
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number MMBT4403TDICT, MMBT4403T7, MMBT4403TDITR
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 885320-MMBT4403T-7
Ultra Librarian 3D Model Ultra Librarian MMBT4403T-7 CAD Model

Description

Diodes Incorporated MMBT4403T-7 PNP Transistor

The MMBT4403T-7 is a high-performance PNP transistor from Diodes Incorporated, designed to deliver efficient current amplification and switching functionalities. This transistor is ideal for a wide range of applications, including signal processing, power management, and other electronic circuits that require a reliable PNP transistor. Its compact SOT-523 package makes it suitable for space-constrained applications while providing excellent power handling capabilities.

Key Features

  • Type: PNP
  • Package: SOT-523 surface mount
  • Collector-Emitter Voltage (Vceo): 40V
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE): 100 to 300
  • Transition Frequency (fT): 100MHz
  • Operating and Storage Junction Temperature Range: -55°C to +150°C

The MMBT4403T-7 is engineered to provide a high collector-emitter breakdown voltage of 40V, which allows it to handle moderate voltage applications efficiently. The transistor is capable of a collector current up to 600mA, making it suitable for driving medium power loads. With a power dissipation rating of 350mW, it can sustain moderate thermal conditions without compromising performance.

The device boasts a high DC current gain (hFE) ranging from 100 to 300, ensuring ample current amplification for a variety of uses. Additionally, with a transition frequency of 100MHz, the MMBT4403T-7 is optimized for applications that require fast switching and accurate signal amplification at high frequencies.

Constructed with reliability in mind, the MMBT4403T-7 can operate and be stored in a wide temperature range from -55°C to +150°C, making it suitable for use in harsh environments. The SOT-523 package is designed for surface mount technology, allowing for efficient PCB assembly processes and integration into various electronic systems.

Whether you're designing an amplifier, switch, or any other circuit that requires a dependable PNP transistor, the MMBT4403T-7 from Diodes Incorporated is an excellent choice that combines performance, durability, and miniaturization.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,225+ $0.0409 $50.1025
2,980+ $0.0336 $100.1280
4,605+ $0.0326 $150.1230
6,350+ $0.0315 $200.0250
8,200+ $0.0305 $250.1000
10,990+ $0.0273 $300.0270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 1225 pcs
Order Increment : 1 pcs
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