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KSD362R

Part No KSD362R
Manufacturer Fairchild/ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS NPN 70V 5A TO220-3  /  Bipolar (BJT) Transistor NPN 70 V 5 A 10MHz 40 W Through Hole TO-220-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Fairchild Semiconductor
Package Bulk
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 70 V
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 5A
Current - Collector Cutoff (Max) 20µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 5A, 5V
Power - Max 40 W
Frequency - Transition 10MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-KSD362R-FS,FAIFSCKSD362R
Standard Package 1,200
Win Source Part Number 1067982-KSD362R
Ultra Librarian 3D Model Ultra Librarian KSD362R CAD Model

Description

The KSD362R is an NPN bipolar transistor used for discrete semiconductor products.

  • Maximum Power: 40W
  • Collector-Emitter Breakdown Voltage: 70V
  • Maximum Collector Current: 5A
  • DC Current Gain (hFE): 40 @ 5A, 5V
  • Vce Saturation (Max): 1V @ 500mA, 5A
  • Device Package Type: TO-220-3
  • Supplier Device Package: TO-220-3
  • Suitable For: Bipolar (BJT) single transistor applications

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