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SI1405DL-T1-GE3

Part No SI1405DL-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 1.6A SC-70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 7nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 568mW (Ta)
Maximum Rds On at Id,Vgs 125 mOhm @ 1.8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 1095686-SI1405DL-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1405DL-T1-GE3 CAD Model

Description

This electronic component is a MOSFET that belongs to the P-Channel polarity.

  • Win Source Part Number: 1095686-SI1405DL-T1-GE3
  • Packaging: Reel - TR
  • Power Dissipation: 568mW (Ta)
  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current: 1.6A (Ta)
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Rds On: 125 mOhm @ 1.8A, 4.5V
  • Package/Case: SC-70-6 (SOT-363)
  • Dimension: 6-TSSOP, SC-88, SOT-363
  • Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)

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