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Same model may have multiple batches, images only for reference.
MJD31CEITU Real Image
Same model may have multiple batches, images only for reference.

MJD31CEITU

Part No MJD31CEITU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 3A TO252-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA, 1V
Power - Max 1.56 W
Frequency - Transition 3MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252-3 (DPAK)
Base Product Number MJD31
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 231550-MJD31CEITU
Ultra Librarian 3D Model Ultra Librarian MJD31CEITU CAD Model

Description

The 231550-MJD31CEITU is a single NPN bipolar transistor from Fairchild/ON Semiconductor.

  • Package: TO-252-3, DPak package
  • Applications: discrete semiconductor applications.
  • Maximum power dissipation: 1.56W
  • Maximum collector-emitter breakdown voltage: 100V
  • Maximum collector current (Ic): 3A
  • Vce saturation: 1.2V @ 375mA and 3A collector current.
  • DC current gain (hFE): 60 @ 100mA and 1V collector-emitter voltage.
  • Frequency transition: 3MHz
  • Mounting: surface mountable
  • Status: active product and is commonly used in various electronic devices and systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3052 $58.7340
110+ $1.0707 $117.7770
170+ $1.0372 $176.3240
235+ $1.0037 $235.8695
300+ $0.9702 $291.0600
400+ $0.8697 $347.8800
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