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Same model may have multiple batches, images only for reference.
MJD31CITU Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

MJD31CITU

Part No MJD31CITU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 100V 3A IPAK
Datasheet
MJD31CITU Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 1.2V @ 375mA, 3A
Collector Cut-off Current(Max) 50μA
Typical Gain (hFE) (Min) 10 @ 3A, 4V
Maximum Power Dissipation 1.56W
Frequency - Transition 3MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Win Source Part Number 058925-MJD31CITU
Popularity Medium
Supply and Demand Status Balance
Quantity per package 70
Ultra Librarian 3D Model Ultra Librarian MJD31CITU CAD Model

Description

The Fairchild/ON Semiconductor electronic component is a discrete semiconductor product with a medium popularity.

  • Manufacturer: Fairchild/ON Semiconductor
  • Win Source Part Number: 058925-MJD31CITU
  • Frequency transition: 3MHz
  • Transistor polarity: NPN
  • Temperature range for operating: 150°C (TJ)
  • Case/package: IPAK (TO-251)
  • Maximum current collector: 3A
  • VCEO maximum collector-emitter breakdown voltage: 100V
  • Maximum power dissipation: 1.56W
  • Typical gain (hFE) (Min): 10 @ 3A, 4V
  • Collector cut-off current (Max): 50μA
  • Max Vce (sat): 1.2V @ 375mA, 3A
  • Quantity per package: 70

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