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Same model may have multiple batches, images only for reference.
MMBT5770 Real Image
Same model may have multiple batches, images only for reference.

MMBT5770

Part No MMBT5770
Manufacturer Fairchild/ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN SOT-23
Datasheet
MMBT5770 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 600MHz
Maximum Power Dissipation 225mW
Typical Gain (hFE) (Min) 30 @ 3mA, 1V
Maximum Current Collector 10mA
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 208622-MMBT5770
Ultra Librarian 3D Model Ultra Librarian MMBT5770 CAD Model

Description

The Fairchild/ON Semiconductor MMBT5770 is a NPN transistor with a maximum collector-emitter breakdown voltage of 15V and a maximum collector current of 10mA.

  • Typical Gain: 30 @ 3mA and 1V
  • Maximum Power Dissipation: 225mW
  • Package: SOT-23-3
  • Mounting: Surface mount technology
  • Frequency Transition: 600MHz
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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