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N302AP

Part No N302AP
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A TO-220AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 300nC @ 10V
Max Input Capacitance 11000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 345W (Tc)
Maximum Rds On at Id,Vgs 2.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 059791-N302AP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian N302AP CAD Model

Description

The N302AP is an N-Channel MOSFET from Fairchild/ON Semiconductor. It comes in a TO-220AB package and is designed for through-hole mounting.

  • Drain-source breakdown voltage: 30V
  • Continuous drain current: 75A (Tc)
  • Gate-source threshold voltage: 3V @ 250μA
  • Maximum gate charge: 300nC @ 10V
  • Maximum input capacitance: 11000pF @ 15V
  • Maximum Rds On at Id,Vgs: 2.5 mOhm @ 75A, 10V
  • Power dissipation: 345W (Tc)
  • Application: suitable for use in discrete semiconductor products.
  • Drive voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Status: obsolete (EOL)
  • Supply and demand status: limited.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $21.7879 $65.3637
7+ $17.8771 $125.1397
11+ $17.3192 $190.5112
14+ $16.7602 $234.6428
18+ $16.2012 $291.6216
24+ $14.5253 $348.6072
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Availability: 9,900 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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