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Same model may have multiple batches, images only for reference.
NDH8502P Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

NDH8502P

Part No NDH8502P
Manufacturer Fairchild/ON Semiconductor
Catalog FETs - Arrays
Description P-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Rds On (Max) @ Id, Vgs 110mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V
Power - Max 800mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-TSOP (0.130", 3.30mm Width)
Supplier Device Package SuperSOT™-8
Base Product Number NDH8502
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 251706-NDH8502P
Ultra Librarian 3D Model Ultra Librarian NDH8502P CAD Model

Description

The NDH8502P is a P-Channel MOSFET transistor in a SuperSOT™-8 package. It features a drain to source voltage (Vdss) of 30V and a continuous drain current (Id) of 2.2A @ 25°C.

  • Maximum on-resistance (Rds On): 110mOhm @ 2.2A and 10V
  • Gate threshold voltage (Vgs(th)): 3V @ 250µA
  • Maximum power dissipation: 800mW
  • Gate charge (Qg): 14.5nC @ 10V
  • Input capacitance (Ciss): 340pF @ 15V

Operating in a temperature range of -55°C to 150°C, the NDH8502P is a high-quality and reliable choice for your electronic projects.

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