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Same model may have multiple batches, images only for reference.
RF1K49157 Real Image
Same model may have multiple batches, images only for reference.

RF1K49157

Part No RF1K49157
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1575 pF @ 25 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 592 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 293199-RF1K49157
Ultra Librarian 3D Model Ultra Librarian RF1K49157 CAD Model

Description

The 293199-RF1K49157 is a single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) integrated circuit (IC) designed for discrete semiconductor applications.

  • Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
  • Vdss: 30V
  • Id: 6.3A @ 25°C
  • Rds On: 30mOhm @ 6.3A and 10V gate-source voltage (Vgs)
  • Mounting Type: Surface Mount
  • Package: 8-SOIC
  • Manufacturer: Fairchild/ON Semiconductor
  • Power Dissipation: 2W
  • Gate Charge (Qg): Low
  • Application: Suitable for various semiconductor applications.

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