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RFD10P03L

Part No RFD10P03L
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET
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Manufacturer Fairchild/ON Semiconductor
Win Source Part Number 1242652-RFD10P03L
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RFD10P03L CAD Model

Description

The RFD10P03L is a P-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor/ON Semiconductor. It's designed for low voltage, low on-resistance switching applications, offering efficient power control and management.

Applications:

  • Load switching: Used as a switch to control various loads in low voltage circuits.
  • Power management: Employed in power management circuits for battery charging and discharging.
  • DC-DC converters: Used in voltage regulators and DC-DC converters.
  • Portable devices: Found in battery-powered devices for power control.
  • Analog switches: Employed as analog switches in signal processing circuits.

Features:

  • P-Channel enhancement mode: Operates as a P-Channel MOSFET, requiring a negative gate voltage to turn on.
  • Low on-resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
  • Low gate charge (Qg): Reduces switching losses and improves efficiency at higher frequencies.
  • Low threshold voltage (VGS(th)): Allows for easy drive with low voltage logic.
  • Lead-free package: Available in a lead-free package compliant with environmental regulations.
  • Surface mount package: Available in surface mount packages.

Benefits:

  • High efficiency: Reduces power loss and improves overall system efficiency.
  • Fast switching: Enables precise control of power and reduces switching losses.
  • Low voltage operation: Suitable for low voltage battery powered devices.
  • Easy to use: Simplifies circuit design and reduces component count.
  • Environmentally friendly: Compliant with environmental regulations.

Technical Specifications: The RFD10P03L has a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating of -10A. The on-resistance (RDS(on)) is typically around 0.028 Ohms at a gate-source voltage (VGS) of -10V. The gate threshold voltage (VGS(th)) is typically between -1V and -3V. The power dissipation rating is typically around 2.5W. It is typically available in a SO-8 package. Refer to the Fairchild/ON Semiconductor datasheet for precise specifications and application notes.

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