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Same model may have multiple batches, images only for reference.
RFD16N06LESM9A Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

RFD16N06LESM9A

Part No RFD16N06LESM9A
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 16A DPAK
Datasheet
RFD16N06LESM9A Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage +10V, -8V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 47 mOhm @ 16A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252AA
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 062507-RFD16N06LESM9A
Popularity Medium
Supply and Demand Status Balance
Quantity per package 2,500
Ultra Librarian 3D Model Ultra Librarian RFD16N06LESM9A CAD Model

Description

The RFD16N06LESM9A MOSFET is a N-channel polarized transistor with a maximum power dissipation of 90W (Tc).

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 16A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 62nC @ 10V
  • Package: TO-252AA
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Temperature Range: -55°C to 175°C (TJ)
  • Status: active
  • Package Includes: 2,500 units

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8677 $51.6186
43+ $2.3530 $101.1790
66+ $2.2794 $150.4404
91+ $2.2059 $200.7369
118+ $2.1324 $251.6232
157+ $1.9118 $300.1526
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Availability: 77 pieces
MOQ: 18 pcs
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