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BSC360N15NS3GATMA1

Part No BSC360N15NS3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 33A 8TDSON / Trans MOSFET N-CH 150V 33A Automotive 8-Pin TDSON EP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 150V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Vgs(th) (Maximum) @ Id 4V @ 45μA
Gate Charge (Qg) (Maximum) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1190pF @ 75V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 74W (Tc)
Rds On (Maximum) @ Id, Vgs 36 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TDSON-8
Package 8-PowerTDFN
Win Source Part Number 770415-BSC360N15NS3GATMA1
Popularity Medium
Supply and Demand Status Limited
Family Name BSC360N15NS3GATMA1
Introduction Date May 18, 2010
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian BSC360N15NS3GATMA1 CAD Model

Description

The Infineon Technologies BSC360N15NS3GATMA1 is a high-performance MOSFET from Infineon Technologies.

  • Continuous Drain Current: 33A @ 25°C
  • Drain-Source Voltage: 150V
  • Gate-Source Voltage: ±20V
  • Input Capacitance: 1190pF @ 75V
  • Power Dissipation: 74W @ Tc
  • Compliance: Halogen-free
  • Supply and Demand Status: Limited
  • Popularity: Medium
  • Application: Discrete Semiconductor Products
  • Package: Reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9543 $52.4865
130+ $0.7831 $101.8030
200+ $0.7586 $151.7200
275+ $0.7341 $201.8775
355+ $0.7097 $251.9435
475+ $0.6362 $302.1950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,348 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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