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Same model may have multiple batches, images only for reference.
RFD8P06LE Real Image
Same model may have multiple batches, images only for reference.

RFD8P06LE

Part No RFD8P06LE
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 5V
Rds On (Max) @ Id, Vgs 300mOhm @ 8A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 675 pF @ 25 V
Power Dissipation (Max) 48W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 294023-RFD8P06LE
Ultra Librarian 3D Model Ultra Librarian RFD8P06LE CAD Model

Description

The RFD8P06LE is a P-Channel MOSFET transistor suitable for a wide range of applications.

  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 8A @ 25°C
  • Rds On (Max): 300mOhm @ 8A and 5V
  • Gate-Source Voltage (Vgs): 2V @ 250μA
  • Power Dissipation: 48W
  • Temperature Range: -55°C to 175°C
  • Package: TO-251-3 Short Leads, IPak
  • Mounting: through-hole
  • Product Status: active
  • Manufacturer: Fairchild/ON Semiconductor

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