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SSI7N60BTU

Part No SSI7N60BTU
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET  /  N-Channel 600 V 7A (Tc) 3.13W (Ta), 147W (Tc) Through Hole I2PAK (TO-262)
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Fairchild Semiconductor
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
Power Dissipation (Max) 3.13W (Ta), 147W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FAIFSCSSI7N60BTU,2156-SSI7N60BTU
Standard Package 1
Win Source Part Number 993075-SSI7N60BTU
Ultra Librarian 3D Model Ultra Librarian SSI7N60BTU CAD Model

Description

The SSI7N60BTU is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Fairchild Semiconductor, now part of ON Semiconductor. MOSFETs are widely used as switches or amplifiers in electronic circuits.

Applications:

  • Switching Power Supplies: Used as switching elements in DC-DC converters and AC-DC power supplies.
  • Motor Control: Controlling the speed and direction of electric motors.
  • LED Lighting: Driving and controlling LED lighting systems.
  • Inverters: Converting DC power to AC power.
  • Amplifiers: Amplifying signals in audio and radio frequency circuits.

Features:

  • N-channel MOSFET: Allows for efficient switching of high-side loads.
  • High voltage rating (600V): Suitable for high-voltage applications.
  • Low on-resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
  • Fast switching speed: Enables high-frequency operation.
  • Through-hole package: Allows for easy mounting and heat dissipation.

Benefits:

  • High efficiency: Reduces power consumption and heat generation.
  • Fast switching speeds: Enables high-frequency operation.
  • Robust performance: Withstands high voltage and current conditions.
  • Easy to use: Simple to integrate into various electronic circuits.
  • Improved reliability: Enhances the overall reliability of electronic systems.

The 'SSI7N60B' specifies the part's general characteristics, while 'TU' typically indicates the packaging type (e.g., a specific through-hole configuration like TO-220). Key parameters include drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), on-resistance (RDS(on)), and gate charge (Qg). The ON Semiconductor datasheet contains the complete specifications for this device.

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